Engineering sample
€2,480 per module, excl. VAT
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Request samplesSiC half-bridge power module · Preliminary
HDX12HB12
12 SiC chips in parallel
1200 V silicon carbide half-bridge power module engineered for low inductance and high efficiency in a compact industrial package.
HDX12HB12: 12 SiC chips in parallel. Coming soon in the HDX series: HDX04HB12, HDX08HB12 and HDX06FB12.
Specs are preliminary and may change. Datasheet available on request.
Key specifications
| Blocking voltage | 1200 V |
|---|---|
| On-resistance (RDS(on)) | 1.1 mΩ (preliminary) |
| Powerloop inductance | 2.5 nH (preliminary) |
| Package | 62 mm |
| Topology | Half-bridge |
| SiC chips per switch position | 12 |
Features
SiC switching
Silicon carbide device technology for fast, efficient switching.
12 SiC chips in parallel
12 SiC chips in parallel per switch position.
Easy to parallel
Gate accessible from either side of the module, and power terminals laid out for busbar paralleling.
Powerloop inductance
2.5 nH (preliminary) powerloop inductance.
Compact package
62 mm industrial footprint for dense converter designs.
Industrial focus
Built for industrial and energy-heavy work that runs hard, all day.
Low-inductance power loop
DC+ and DC− run close together through the module to keep the power loop small.
Applications
Electric drives
High-efficiency drive stages that benefit from fast SiC switching.
Renewables & conversion
High-power conversion for renewables and related energy systems.
Industrial power
OEM and system-integrator designs that need SiC modules.
Benefits
- Straightforward paralleling of modules (dual-side gate access; busbar-friendly power terminals)
- 2.5 nH (preliminary) powerloop inductance
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